A 0.13-µm CMOS 0.1-12GHz active balun-LNA for multi-standard applications
نویسندگان
چکیده
منابع مشابه
A 0.13-µm CMOS 0.1-12GHz active balun-LNA for multi-standard applications
A 0.1–12GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. In order to realize wideband matching and single-to-differential (S2D) conversion simultaneously, a single-end resistive negative feedback amplifier is adopted as the first stage for input impedance matching, and a novel active balun consisting of common source amplifier and source follower i...
متن کاملCMOS LNA and Mixer Components for 2GHz applications in 0.18-μm CMOS
This paper describes a low noise variable gain amplifier (LNA) and a mixer for a WCDMA frontend receiver based on a direct architecture in 0.18-μm CMOS. The LNA provides a 50Ω input impedance and utilizes a tuned load to provide high selectivity. The LNA achieves a maximum small signal gain of 16.8 dB and a minimum gain of 4.6 dB with good input return loss. In the high gain and the low gain mo...
متن کاملCMOS LNA for BLE Applications
Bluetooth Low Energy (BLE) is an advanced technology that has been designed as complementary technology to classic Bluetooth and also it is the lowest possible power wireless technology that can be designed and built. This paper provides an overview of bluetooth low energy technology and utilization of CMOS Low Noise Amplifier (LNA) for BLE applications. The aim of this paper is review and comp...
متن کاملDesign of a 1-V 90-nm CMOS adaptive LNA for multi-standard wireless receivers
This paper presents the design of a reconfigurable Low-Noise Amplifier (LNA) for the next generation of wireless hand-held devices. The circuit, based on a lumped-approach design and implemented in a 90nm standard RF CMOS technology, consists of a two-stage topology that combines inductive-source degeneration with MOS-varactor based tuning networks and programmable bias currents, in order to ad...
متن کاملA Linearity-Improved Ultra-Wideband Balun-LNA for Cognitive Radio
An ultra-wideband low noise amplifier for cognitive radio applications covering 50 MHz to 10 GHz is designed in a 65-nm CMOS technology. A three-stage dc-coupled common source amplifier with RC degeneration at the last stage optimizes the gain, linearity and output gain-phase balancing. Throughout the covered band, the simulated voltage gain is >23.3 dB whereas the noise figure is <3.4 dB. The ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2013
ISSN: 1349-2543
DOI: 10.1587/elex.10.20130016